FDMC8678S mosfet equivalent, n-channel power trench mosfet.
* Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A
* Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A
* Advanced Package and Silicon combination for low rDS(on) and high.
Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining .
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