FDMC8678S - N-Channel Power Trench MOSFET

Fairchild (now onsemi)

Datasheet Details

Part number	FDMC8678S
Manufacturer	Fairchild (now onsemi)
File Size	385.24 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC8678S Datasheet

General Description

tm The FDMC8678S has been designed to minimize losses in power conversion applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

This device has the added benefit of an efficient monolithic Schottky body diode.

Overview

FDMC8678S N-Channel Power Trench® SyncFETTM July 2009 FDMC8678S N-Channel Power Trench 30V, 18A, 5.

Key Features

Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A.
Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
SyncFET Schottky Body Diode.
MSL1 robust package design.
RoHS Compliant ® SyncFET TM General.

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