FDMC8678S - N-Channel Power Trench MOSFET

Product Overview

Fairchild Semiconductor

Datasheet Details

Part number	FDMC8678S
Manufacturer	Fairchild Semiconductor
File Size	385.24 KB
Description	N-Channel Power Trench MOSFET
Datasheet	FDMC8678S Datasheet
Additional preview pages of the FDMC8678S datasheet.

Product details

Description

The FDMC8678S has been designed to minimize losses in power conversion applications.

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.

Features

Max rDS(on) = 5.2mΩ at VGS = 10V, ID = 15A.
Max rDS(on) = 8.7mΩ at VGS = 4.5V, ID = 12A.
Advanced Package and Silicon combination for low rDS(on) and high efficiency.
SyncFET Schottky Body Diode.
MSL1 robust package design.
RoHS Compliant ® SyncFET TM General.

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Published: Sep 9, 2013 |